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Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um

Q4 Materials Science
Kondensirovannye Sredy Mezhfaznye Granitsy Pub Date : 2023-01-01 DOI:10.17308/kcmf.2023.25/10972
E. Vasilkova, E. Pirogov, M. Sobolev, E. V. Ubiyvovk, A. Mizerov, P. Seredin
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2.2 ~ 2.6 um高光敏InGaAs/InP光电探测器的分子束外延
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Kondensirovannye Sredy Mezhfaznye Granitsy
Kondensirovannye Sredy Mezhfaznye Granitsy Materials Science-Materials Chemistry
CiteScore
1.10
自引率
0.00%
发文量
15
审稿时长
8 weeks
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