High-Efficiency 250-320 GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI:10.1587/transele.2023mmp0005

Y. Kumazaki, S. Ozaki, N. Okamoto, N. Hara, Y. Nakasha, Masaru Sato, T. Ohki

引用次数: 1

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采用inp基金属氧化物半导体高电子迁移率晶体管的高效率250-320 GHz功率放大器

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEICE Transactions on Electronics 工程技术-工程：电子与电气

CiteScore

1.00

自引率

20.00%

发文量

审稿时长

3-6 weeks

期刊介绍： Currently, the IEICE has ten sections nationwide. Each section operates under the leadership of a section chief, four section secretaries and about 20 section councilors. Sections host lecture meetings, seminars and industrial tours, and carry out other activities. Topics: Integrated Circuits, Semiconductor Materials and Devices, Quantum Electronics, Opto-Electronics, Superconductive Electronics, Electronic Displays, Microwave and Millimeter Wave Technologies, Vacuum and Beam Technologies, Recording and Memory Technologies, Electromagnetic Theory.