Electromagnetic Behavior of Cu and Ni Nanofilms in the X-band

IF 0.9 Q3 ENGINEERING, AEROSPACE
Vitor Fernando de Melo Gonçalves, E. G. R. Anjos, G. F. Morgado, T. R. Brazil, M. Baldan, Maria Aparecida Miranda de Souza, E. Nohara, M. C. Rezende
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引用次数: 1

Abstract

Currently, the presence of spurious microwave radiation is increasing in the environment, which has caused concern due to possible health problems in living beings and electromagnetic interference in electronic systems. To control this problem, studies in the materials area are taking place, aiming to attenuate the spurious radiation and meet requirements of good performance in broadband, low cost and low weight. The present work aimed to study Cu and Ni nanometric films with thicknesses of 65 and 200 nm, deposited on polyethylene terephthalate substrate by magnetron sputtering. Scanning electron microscopy with a field emission gun (FEG-SEM) showed that the films produced have different morphological textures, due to the parameters used in the sputtering process and also the free energy of metals. Impedance spectroscopy measurements showed that the films have low conductivity values, due to the metallic oxides formed on the film surfaces, confirmed by X-ray diffraction, and also to the presence of defects. Electromagnetic characterization (8.2 – 12.4 GHz) showed that the Cu and Ni thin films had low performance, except the Ni_200 nm film, which showed a total shielding efficiency of about 30% in broadband. This result is promising considering the nanometric thickness of the Ni film.
Cu和Ni纳米膜在x波段的电磁行为
目前,环境中存在的虚假微波辐射正在增加,由于可能对生物健康造成问题和电子系统的电磁干扰,这引起了人们的关注。为了控制这一问题,材料领域的研究正在进行,旨在衰减杂散辐射,满足宽带、低成本和低重量的良好性能要求。本文研究了在聚对苯二甲酸乙二醇酯衬底上磁控溅射制备厚度分别为65 nm和200 nm的Cu和Ni纳米薄膜。用场发射枪(FEG-SEM)扫描电镜分析表明,溅射过程中所使用的参数和金属的自由能都影响了薄膜的形态结构。阻抗谱测量表明,由于在薄膜表面形成的金属氧化物(经x射线衍射证实)以及缺陷的存在,薄膜具有低电导率值。电磁特性(8.2 ~ 12.4 GHz)表明,除Ni_200 nm薄膜在宽带中总屏蔽效率约为30%外,Cu和Ni薄膜性能较差。考虑到Ni薄膜的纳米厚度,这一结果是有希望的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
2.00
自引率
0.00%
发文量
16
审稿时长
20 weeks
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