The effect of Barium substitution on the structural and dielectric properties of Pb1-XBaX(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 ceramics at the morphotropic phase boundary

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-01-01 DOI:10.15251/jor.2023.193.295

A. Benmakhlouf, R. Makhloufi, A. Boutarfaia, B. Messai, F. Hadji, M. Nouiri

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引用次数: 0

Abstract

In this study PZT type ceramics with a general formula Pb1- xBax(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 where (x = 0.00, 0.04, and 0.08) were elaborated by the solid-state reaction and studied for their structural and dielectric properties in the region of the morphotropic phase boundary (MPB). Different techniques were used to characterize the obtained samples such as X-ray diffraction (XRD) which shows that the results confirm the high purity of prepared samples without any secondary phase and also indicate the coexistence of both the tetragonal and rhombohedral phases. All the absorption bands corresponding to the perovskite structure are exhibited by The Fourier Transform Infrared spectroscopy (FTIR). The scanning electronic microscopy (SEM) shows that the mean grain size was found between 2,84 and 2,14 µm, the Curie temperature (TC) decreased with increasing Ba2+ content. Furthermore, the effect of the temperature, frequency, and composition on the dielectric properties demonstrated a maximum value of the dielectric constant ε max = 38800 at 1 kHz when X= 0.08.

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钡取代对Pb1-XBaX(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3相变相界面结构和介电性能的影响

本文采用固相反应法制备了通式为Pb1- xBax(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 (x = 0.00, 0.04, 0.08)的PZT型陶瓷，研究了其在致形相边界(MPB)区域的结构和介电性能。用x射线衍射(XRD)等方法对所得样品进行了表征，结果表明制备的样品纯度高，无二次相，并且四方相和菱形体相共存。傅里叶变换红外光谱(FTIR)显示了钙钛矿结构对应的所有吸收带。扫描电镜(SEM)结果表明，合金的平均晶粒尺寸在2.84 ~ 2.14µm之间，居里温度(TC)随Ba2+含量的增加而降低。此外，温度、频率和成分对介电性能的影响表明，当X= 0.08时，介电常数ε max = 38800在1 kHz时达到最大值。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.