Effect of thickness on the physical characterization of sprayed ZnO thin films

IF 1 4区 材料科学
H. Saleh, J. M. Hussein, D. E. Alkateb, N. Habubi, F. S. Ahmed, S. Chiad
{"title":"Effect of thickness on the physical characterization of sprayed ZnO thin films","authors":"H. Saleh, J. M. Hussein, D. E. Alkateb, N. Habubi, F. S. Ahmed, S. Chiad","doi":"10.15251/jor.2023.193.275","DOIUrl":null,"url":null,"abstract":"ZnO thin films having different thicknesses (300, 400 and 500) nm were deposited by spray pyrolysis method (SPM). XRD analysis indicate that the deposited films have hexagonal wurtzite structure and display a strong peak at (002) plane. The effects of thicknesses on crystallite size, stress and strain are investigated. The thicknesses effect on film surface topography parameters such as roughness, particle size and Root mean square of grains are calculated. Atomic Force Microscopy (AFM) confirm that the distribution grains size appears nanostructure and homogeneous in all films. RMS increases from 1.54 nm to 3.98 nm with thicknesses 500 nm. The surface roughness increases from 1.33 nm to 3.30 nm. Transmittance was detecting to be atop 80% in visible region. The bandgap energy increased from 2.83 eV to 3.75 eV with thickness elevation.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"1 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2023.193.275","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

ZnO thin films having different thicknesses (300, 400 and 500) nm were deposited by spray pyrolysis method (SPM). XRD analysis indicate that the deposited films have hexagonal wurtzite structure and display a strong peak at (002) plane. The effects of thicknesses on crystallite size, stress and strain are investigated. The thicknesses effect on film surface topography parameters such as roughness, particle size and Root mean square of grains are calculated. Atomic Force Microscopy (AFM) confirm that the distribution grains size appears nanostructure and homogeneous in all films. RMS increases from 1.54 nm to 3.98 nm with thicknesses 500 nm. The surface roughness increases from 1.33 nm to 3.30 nm. Transmittance was detecting to be atop 80% in visible region. The bandgap energy increased from 2.83 eV to 3.75 eV with thickness elevation.
厚度对喷涂ZnO薄膜物理特性的影响
采用喷雾热解法(SPM)制备了不同厚度(300、400和500)nm的ZnO薄膜。XRD分析表明,沉积膜具有六方纤锌矿结构,在(002)面有一个强峰。研究了厚度对晶粒尺寸、应力和应变的影响。计算了厚度对薄膜表面形貌参数粗糙度、晶粒尺寸和晶粒均方根的影响。原子力显微镜(AFM)证实,所有薄膜的晶粒尺寸均呈纳米结构和均匀分布。厚度为500 nm时,RMS从1.54 nm增加到3.98 nm。表面粗糙度由1.33 nm增加到3.30 nm。可见光区透光率达80%以上。随着厚度的增加,带隙能量从2.83 eV增加到3.75 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信