The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation

IF 0.6 4区 物理与天体物理 Q4 OPTICS
Liu Baojian, Duan Weibo, Li Daqi, Yu Deming, Chen Gang, Liu Dingquan
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引用次数: 0

Abstract

In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac⁃ tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re⁃ spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10 to a minimum value of 1. 02×10(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re⁃ gion,which were very critical for the application in optical thin film coating devices.
退火温度对电子束蒸发沉积硅薄膜结构和光学性能的影响
本文系统地研究了退火温度对硅薄膜结构和光学性能的影响。采用电子束蒸发法制备硅膜,在200 ~ 500℃的N2气氛中退火。采用x射线衍射(XRD)、拉曼光谱(Raman)、电子自旋共振(ESR)和光透射率测试分别对膜进行了表征。随着退火温度的升高,在短、中范围内,硅薄膜的非晶网络有序度得到改善,缺陷密度显著降低。当样品在400℃退火时,消光系数k从6减小。14×10的最小值为1。02×10(在1000 nm处),这是由于最低的缺陷密度,约为沉积样品的五分之一。结果表明,在适当的温度下退火可以有效地降低硅薄膜在近红外区的光吸收,这对于光学薄膜涂层器件的应用是非常关键的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.20
自引率
14.30%
发文量
4258
审稿时长
2.9 months
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