Liu Baojian, Duan Weibo, Li Daqi, Yu Deming, Chen Gang, Liu Dingquan
{"title":"The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation","authors":"Liu Baojian, Duan Weibo, Li Daqi, Yu Deming, Chen Gang, Liu Dingquan","doi":"10.11972/J.ISSN.1001-9014.2020.01.001","DOIUrl":null,"url":null,"abstract":"In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac⁃ tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re⁃ spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10 to a minimum value of 1. 02×10(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re⁃ gion,which were very critical for the application in optical thin film coating devices.","PeriodicalId":50181,"journal":{"name":"红外与毫米波学报","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"红外与毫米波学报","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.11972/J.ISSN.1001-9014.2020.01.001","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac⁃ tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re⁃ spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10 to a minimum value of 1. 02×10(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re⁃ gion,which were very critical for the application in optical thin film coating devices.