The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation

IF 0.6 4区 物理与天体物理 Q4 OPTICS
Liu Baojian, Duan Weibo, Li Daqi, Yu Deming, Chen Gang, Liu Dingquan
{"title":"The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation","authors":"Liu Baojian, Duan Weibo, Li Daqi, Yu Deming, Chen Gang, Liu Dingquan","doi":"10.11972/J.ISSN.1001-9014.2020.01.001","DOIUrl":null,"url":null,"abstract":"In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac⁃ tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re⁃ spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10 to a minimum value of 1. 02×10(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re⁃ gion,which were very critical for the application in optical thin film coating devices.","PeriodicalId":50181,"journal":{"name":"红外与毫米波学报","volume":"5 1","pages":"1"},"PeriodicalIF":0.6000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"红外与毫米波学报","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.11972/J.ISSN.1001-9014.2020.01.001","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper,the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffrac⁃ tion(XRD),Raman spectroscopy,electronic-spin resonance(ESR)and optical transmittance measurement,re⁃ spectively. With annealing temperature increased,the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6. 14×10 to a minimum value of 1. 02×10(at 1000 nm),which was due to the lowest defect density,about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared re⁃ gion,which were very critical for the application in optical thin film coating devices.
退火温度对电子束蒸发沉积硅薄膜结构和光学性能的影响
本文系统地研究了退火温度对硅薄膜结构和光学性能的影响。采用电子束蒸发法制备硅膜,在200 ~ 500℃的N2气氛中退火。采用x射线衍射(XRD)、拉曼光谱(Raman)、电子自旋共振(ESR)和光透射率测试分别对膜进行了表征。随着退火温度的升高,在短、中范围内,硅薄膜的非晶网络有序度得到改善,缺陷密度显著降低。当样品在400℃退火时,消光系数k从6减小。14×10的最小值为1。02×10(在1000 nm处),这是由于最低的缺陷密度,约为沉积样品的五分之一。结果表明,在适当的温度下退火可以有效地降低硅薄膜在近红外区的光吸收,这对于光学薄膜涂层器件的应用是非常关键的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.20
自引率
14.30%
发文量
4258
审稿时长
2.9 months
期刊介绍:
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信