Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers

Abstract

We introduce an approach to decrease quantity of radiation defects in area of implanted-heterojunction rectifier. The approach based on implantation of ions of dopant in a homogenous sample, overgrowth of the damaged area and annealing of radiation defects. In this situation under spatial conditions one can obtain decreasing of quantity of radiation defects.