Broadband High Power Attenuator Based on GaAs Substrate

相豫 程
{"title":"Broadband High Power Attenuator Based on GaAs Substrate","authors":"相豫 程","doi":"10.12677/hjwc.2022.122002","DOIUrl":null,"url":null,"abstract":"The attenuator is a power gain control element, which is used in various communication amplifier circuit scenarios to adjust the signal or power to achieve the optimal state of the circuit. With the joint efforts of scientific researchers in recent years, MMIC technology has made breakthroughs in various aspects, and the current research direction has moved towards broadband, high power and other directions. The attenuator involved in this paper provides a reference design and specific tape-out for high power and ultra-wideband while realizing localization. Its bare chip size is 1.2 × 1.0 mm, which can meet the 2 × 2 mm package in QFN, the attenuation is 5dB, the frequency band range is DC-40GHz, and the power tolerance can reach 2 W.","PeriodicalId":66606,"journal":{"name":"无线通信","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"无线通信","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.12677/hjwc.2022.122002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The attenuator is a power gain control element, which is used in various communication amplifier circuit scenarios to adjust the signal or power to achieve the optimal state of the circuit. With the joint efforts of scientific researchers in recent years, MMIC technology has made breakthroughs in various aspects, and the current research direction has moved towards broadband, high power and other directions. The attenuator involved in this paper provides a reference design and specific tape-out for high power and ultra-wideband while realizing localization. Its bare chip size is 1.2 × 1.0 mm, which can meet the 2 × 2 mm package in QFN, the attenuation is 5dB, the frequency band range is DC-40GHz, and the power tolerance can reach 2 W.
基于砷化镓衬底的宽带大功率衰减器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
195
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信