Self-Assembled Monolayer of Au Nanodots Deposited on Porous Semiconductor Structures

I. Tiginyanu, E. Monaico, K. Nielsch
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引用次数: 12

Abstract

We demonstrate the possibility to cover the surface of GaP and InP porous structures by a self-assembled monolayer of electrochemically deposited nanoscale Au nanodots. After nucleation, each dot was found to increase in sizes up to a critical transverse dimension, the process of pulsed electrodeposition of gold being continuously supported by the formation of new nanodots. The density of deposited Au dots is shown to be dependent upon the number and width of the applied voltage pulses. The deposition of "size-saturated" dots continues until the entire surface exposed to the electrolyte is covered by a monolayer of self-assembled Au nanodots.
自组装单层金纳米点沉积在多孔半导体结构上
我们证明了用电化学沉积的纳米金纳米点自组装单层覆盖GaP和InP多孔结构表面的可能性。在成核后,每个点的尺寸都增加到一个临界的横向尺寸,新的纳米点的形成持续支持了脉冲电沉积金的过程。沉积金点的密度取决于施加电压脉冲的数量和宽度。“尺寸饱和”的金纳米点会继续沉积,直到暴露于电解质的整个表面被一层自组装的金纳米点所覆盖。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
ECS Electrochemistry Letters
ECS Electrochemistry Letters ELECTROCHEMISTRY-MATERIALS SCIENCE, MULTIDISCIPLINARY
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