Superlattice $\mu {\rm TEC}$ Hot Spot Cooling

V. Litvinovitch, Peng Wang, A. Bar-Cohen
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引用次数: 8

Abstract

Proposed uses of solid-state thermoelectric microcoolers for hot spot remediation have included the formation of a superlattice layer on the back of the microprocessor chip, but there have been few studies on the cooling performance of such devices. This paper provides the results of 3-D, electrothermal, finite element modeling of a superlattice microcooler, focusing on the hot spot temperature and superlattice surface temperature reductions, respectively. Simulated temperature distributions and heat flow patterns in the silicon, associated with variations in microcooler geometry, chip thickness, hot spot size, hot spot heat flux, and superlattice thickness are provided. Comparison is made to hot spot cooling achieved by the Peltier effect in the silicon microprocessor chip itself. The numerical results suggest that, for a variety of operating conditions and geometries, while increasing the superlattice thickness serves to decrease the exposed superlattice surface temperature, it is ineffective in reducing the hot spot temperature below that due to the silicon Peltier effect.
超晶格$\mu {\rm TEC}$热点冷却
固态热电微冷却器用于热点修复的建议用途包括在微处理器芯片背面形成超晶格层,但对此类设备的冷却性能的研究很少。本文提供了超晶格微冷却器的三维、电热、有限元建模结果,分别关注了热点温度和超晶格表面温度的降低。模拟了硅中的温度分布和热流模式,与微冷却器几何形状、芯片厚度、热点尺寸、热点热流密度和超晶格厚度的变化有关。与硅片微处理器芯片本身的珀尔帖效应实现的热点冷却进行了比较。数值结果表明,对于各种操作条件和几何形状,增加超晶格厚度有助于降低暴露在外的超晶格表面温度,但由于硅珀尔帖效应,增加超晶格厚度对于降低热点温度是无效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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