Analytical and Numerical Modeling of the Thermal Performance of Three-Dimensional Integrated Circuits

Ankur Jain, Robert E. Jones, R. Chatterjee, S. Pozder
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引用次数: 139

Abstract

Three-dimensional (3D) interconnection technology offers several electrical advantages, including reduced signal delay, reduced interconnect power, and design flexibility. 3D integration relies on through-silicon vias (TSVs) and the bonding of multiple active layers to stack several die or wafers containing integrated circuits (ICs) and provide direct electrical interconnection between the stacked strata. While this approach provides several electrical benefits, it also offers significant challenges in thermal management. While some work has been done in the past in this field, a comprehensive treatment is still lacking. In the current work, analytical and finite-element models of heat transfer in stacked 3D ICs are developed. The models are used to investigate the limits of thermal feasibility of 3D electronics and to determine the improvements required in traditional packaging in order to accommodate 3D ICs. An analytical model for temperature distribution in a multidie stack with multiple heat sources is developed. The analytical model is used to extend the traditional concept of a single-valued junction-to-air thermal resistance in an IC to thermal resistance and thermal sensitivity matrices for a 3D IC. The impact of various geometric parameters and thermophysical properties on thermal performance of a 3D IC is investigated. It is shown that package and heat sink thermal resistances play a more important role in determining temperature rise compared to thermal resistances intrinsic to the multidie stack. The improvement required in package and heat sink thermal resistances for a 3D logic-on-memory implementation to be thermally feasible is quantified. An increase in maximum temperature in a 3D IC compared to an equivalent system-in-package (SiP) is predicted. This increase is found to be mainly due to the reduced chip footprint. The increased memory die temperature in case of memory-on-logic integration compared to a SiP implementation is identified to be a significant thermal management challenge in the future. The results presented in this paper may be useful in the development of thermal design guidelines for 3D ICs, which are expected to help maximize the electrical benefits of 3D technology without exacerbating thermal management issues when implemented in early-stage electrical design and layout tools.
三维集成电路热性能的分析与数值模拟
三维(3D)互连技术提供了几个电气优势,包括减少信号延迟,降低互连功率和设计灵活性。3D集成依赖于硅通孔(tsv)和多个有源层的键合,以堆叠多个包含集成电路(ic)的芯片或晶圆,并在堆叠层之间提供直接的电气互连。虽然这种方法提供了一些电气优势,但它也在热管理方面提出了重大挑战。虽然过去在这一领域已经做了一些工作,但仍然缺乏全面的治疗方法。在目前的工作中,建立了多层三维集成电路的传热分析模型和有限元模型。这些模型用于研究3D电子器件的热可行性限制,并确定传统封装所需的改进,以适应3D集成电路。建立了具有多热源的多模堆温度分布的解析模型。利用解析模型将传统的集成电路中单值结对空气热阻的概念扩展到三维集成电路的热阻和热敏矩阵,研究了各种几何参数和热物理性质对三维集成电路热性能的影响。结果表明,封装和散热器的热阻在决定温升方面起着比多晶片堆固有热阻更重要的作用。为了使3D内存逻辑实现在热上可行,对封装和散热器热阻所需的改进进行了量化。与等效的系统级封装(SiP)相比,3D集成电路的最高温度预计会增加。这种增长主要是由于芯片占用空间的减少。与SiP实现相比,在逻辑上内存集成的情况下,内存芯片温度的增加被认为是未来重大的热管理挑战。本文提出的结果可能有助于开发3D集成电路的热设计指南,这些指南有望帮助最大化3D技术的电气效益,而不会在早期电气设计和布局工具中实施时加剧热管理问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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