Overview of Nitride Semiconductors

IF 6.7 3区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Optomechatronics Pub Date : 2015-01-02 DOI:10.1080/15599612.2014.944292

T. Matsuoka

引用次数: 5

Abstract

The short history of the development in nitride semiconductors is described. As key issues for the future progress are concreted from this history, the polarity of crystal, the substrate for the epitaxial growth of nitride semiconductors, and emerging material, InN are introduced. The device applications including optical devices and transport devices are reviewed. Finally, this article looks into the future prospect of nitride semiconductors.

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氮化半导体概述

简述了氮化半导体的发展历史。在此基础上，对晶体极性、氮化半导体外延生长的衬底和新兴材料InN等未来发展的关键问题进行了介绍。综述了器件的应用，包括光学器件和传输器件。最后，对氮化半导体的发展前景进行了展望。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Optomechatronics 工程技术-工程：电子与电气

CiteScore

9.30

自引率

0.00%

发文量

审稿时长

3 months

期刊介绍： International Journal of Optomechatronics publishes the latest results of multidisciplinary research at the crossroads between optics, mechanics, fluidics and electronics. Topics you can submit include, but are not limited to: -Adaptive optics- Optomechanics- Machine vision, tracking and control- Image-based micro-/nano- manipulation- Control engineering for optomechatronics- Optical metrology- Optical sensors and light-based actuators- Optomechatronics for astronomy and space applications- Optical-based inspection and fault diagnosis- Micro-/nano- optomechanical systems (MOEMS)- Optofluidics- Optical assembly and packaging- Optical and vision-based manufacturing, processes, monitoring, and control- Optomechatronics systems in bio- and medical technologies (such as optical coherence tomography (OCT) systems or endoscopes and optical based medical instruments)