Analysis of the degradation of amorphous silicon mini-modules under a severe sequential UV/DH test

IF 1.9 Q3 PHYSICS, APPLIED
Julia Vincent, Venkata Ramana Posa, Ali Khouzam, P. Logerais, Mustapha El Yaakoubi, A. Labouret
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Abstract

This study presents the results of severe accelerated tests carried out on four encapsulated amorphous silicon (a-Si) mini-modules. All the a-Si mini-modules were exposed to a 85 °C and 85% relative humidity damp heat (DH) prolonged treatment for 5000 h representing five times the duration specified by the IEC 61215 standard for qualification tests. For two of the four mini-modules, the DH test was preceded by a severe UV preconditioning, by applying 30 times the dose of 15 kWh/m2 at a temperature of 50 °C as prescribed by the IEC 61215 standard, in order to enhance the degradation during the following DH test and to reduce the overall testing time. I–V curves were plotted with a time step of 100 h under standard test conditions (STC) using a class A solar simulator and a source meter in order to monitor the degradation throughout both the tests. A visual inspection with photographic capturing was also performed at each stage to detect the apparent defects. Corrosion observed after 2000 h owing to the ingress of humidity is explained here by two possible infiltration paths in the layers of the mini-modules. Delamination occurred after 5000 h for the PV mini-modules which underwent the extended DH test. After 5000 h of damp heat testing, the degradation of the maximal power (Pmax) was found to be slightly accelerated for the a-Si mini-modules that were previously exposed to a severe UV preconditioning, with a value reaching 80% of its initial value, whereas, for the others only subjected to the prolonged DH test, the maximal power remained above 80% of its initial value. In all cases, the mini-modules seemed highly reliable with no failure after 5000 h of accelerated testing, and, based on an equivalent time of 20 years for 1000 h of accelerated test, they would exhibit a limited degradation rate of 0.2%/year in outdoor field conditions.
非晶硅微型组件在严格的连续UV/DH测试下的降解分析
本研究介绍了在四个封装的非晶硅(a-Si)微型模块上进行的严重加速测试的结果。所有a- si微型模块暴露在85°C和85%相对湿度的湿热(DH)下,长时间处理5000小时,是IEC 61215标准规定的合格测试时间的五倍。对于四个迷你模块中的两个,在进行DH测试之前进行了严格的紫外线预处理,按照IEC 61215标准的规定,在50°C的温度下施加30倍于15 kWh/m2的剂量,以便在接下来的DH测试中增强降解并减少总体测试时间。在标准测试条件(STC)下,使用a类太阳模拟器和源计绘制时间步长为100 h的I-V曲线,以便监测整个测试过程中的退化情况。在每个阶段还进行了摄影捕捉的视觉检查,以检测明显的缺陷。在2000 h后观察到的由于湿度进入的腐蚀,这里用微型模块层中的两种可能的渗透路径来解释。经过扩展DH测试的PV微型组件在5000 h后发生分层。经过5000 h的湿热测试,发现先前暴露于严重紫外线预处理的a- si微型模块的最大功率(Pmax)的退化略有加速,达到其初始值的80%,而对于其他仅经过长时间DH测试的a- si微型模块,最大功率仍保持在其初始值的80%以上。在所有情况下,迷你模块在5000小时的加速测试后似乎高度可靠,没有出现故障,并且,基于20年的等效时间,1000小时的加速测试,它们在室外现场条件下将表现出0.2%/年的有限降解率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
EPJ Photovoltaics
EPJ Photovoltaics PHYSICS, APPLIED-
CiteScore
2.30
自引率
4.00%
发文量
15
审稿时长
8 weeks
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