Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts

IF 1.9 Q3 PHYSICS, APPLIED
A. Desthieux, J. Posada, P. Grand, C. Broussillou, B. Bazer-Bachi, G. Goaer, Davina Messou, M. Bouttemy, E. Drahi, P. Cabarrocas
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引用次数: 2

Abstract

Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiOx), doped polycrystalline silicon (poly-Si) and silicon nitride (SiNx:H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p+) microcrystalline silicon (μc-Si:H). We report on the impact of this deposition step on the SiOx layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiOx\(p+) μc-Si\SiNx:H with no annealing step.
PECVD μc-Si:H沉积对钝化触头隧道氧化物的影响
钝化触点正成为当前光伏行业的主流选择,因为它们能够提供出色的表面钝化以及良好的载流子收集导电性。然而,它们的集成通常需要很长的退火步骤,这在工业中是不可取的。在这项工作中,我们研究了PECVD作为一种完成所有沉积步骤的方法:氧化硅(SiOx),掺杂多晶硅(poly-Si)和氮化硅(SiNx:H),然后是单一的烧制步骤。通过沉积(p+)微晶硅(μc-Si:H)避免了多晶硅层的起泡。我们报道了这一沉积步骤对PECVD沉积的SiOx层的影响,并通过比较PECVD和湿化学氧化物在该孔选择性钝化接触层中的钝化性能。我们在p型FZ晶圆上采用湿化学SiOx\(p+) μc-Si\SiNx:H,在没有退火步骤的情况下达到了iVoc > 690 mV。
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来源期刊
EPJ Photovoltaics
EPJ Photovoltaics PHYSICS, APPLIED-
CiteScore
2.30
自引率
4.00%
发文量
15
审稿时长
8 weeks
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