Free electron harmonic generation in heavily doped semiconductors: the role of the materials properties

IF 1.5 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
F. De Luca, Michele Ortolani, C. Ciracì
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引用次数: 3

Abstract

Heavily doped semiconductors have emerged as low-loss and tunable materials for plasmonics at mid-infrared frequencies. We analyze the nonlinear optical response of free electrons and show how nonlinear optical phenomena associated with high electron concentration are influenced by the intrinsic properties of semiconductors, namely background permittivity and effective mass. We apply our recently developed hydrodynamic description that takes into account nonlinear contributions up to the third order, usually negligible for noble metals, to compare third-harmonic generation from InP, Ge, GaAs, Si, ITO and InSb. We show how free electron nonlinearities may be enhanced with a proper choice of the semiconductor.
重掺杂半导体中自由电子谐波的产生:材料性质的作用
重掺杂半导体已成为中红外频率等离子体的低损耗和可调谐材料。我们分析了自由电子的非线性光学响应,并展示了与高电子浓度相关的非线性光学现象如何受到半导体的本征性质,即背景介电常数和有效质量的影响。我们应用我们最近开发的流体动力学描述,考虑到三阶非线性贡献,对于贵金属通常可以忽略不计,来比较InP, Ge, GaAs, Si, ITO和InSb的三次谐波产生。我们展示了如何通过适当选择半导体来增强自由电子的非线性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
EPJ Applied Metamaterials
EPJ Applied Metamaterials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
3.10
自引率
6.20%
发文量
16
审稿时长
8 weeks
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