Photo- and thermal-annealing reactions of 32P in pure and oxygen-doped KCl single crystals

Abstract

The behaviour of 32P-recoils during thermal and photo-annealing has been compared in pure and oxygen-doped KCl single crystals using reactor irradiation and ion implantation techniques to generate the radiophosphorus. The existence of a new type of 32P(I)-precursor is shown to be responsible for thermal annealing below 140° in oxygen doped crystals. The new 32P(I)-precursor is also present in pure KCl after F-centre bleaching. The radiolysis products of the oxygen dopant and of the host lattice are observed to determine the variations in the valence distribution of 32P.