Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors

IF 0.6 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Optoelectronics and Advanced Materials Pub Date : 2010-01-01 DOI:10.1016/B978-0-12-388429-9.00005-4

V. Mikla

引用次数: 1

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间隙态的静电光谱学:富硒非晶半导体

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Optoelectronics and Advanced Materials 工程技术-材料科学：综合

CiteScore

0.90

自引率

20.00%

发文量

审稿时长

6.5 months

期刊介绍： The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.