Theory of thermoelectric power in low-mobility semiconductors

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Indian Journal of Pure & Applied Physics Pub Date : 1963-05-01 DOI:10.1016/0038-092x(64)90015-5

M. M. Chadda, A. Sinha

引用次数: 1

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低迁移率半导体的热电功率理论

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Indian Journal of Pure & Applied Physics 物理-物理：综合

CiteScore

1.30

自引率

14.30%

发文量

审稿时长

7 months

期刊介绍： Started in 1963, this journal publishes Original Research Contribution as full papers, notes and reviews on classical and quantum physics, relativity and gravitation; statistical physics and thermodynamics; specific instrumentation and techniques of general use in physics, elementary particles and fields, nuclear physics, atomic and molecular physics, fundamental area of phenomenology, optics, acoustics and fluid dynamics, plasmas and electric discharges, condensed matter-structural, mechanical and thermal properties, electronic, structure, electrical, magnetic and optical properties, cross-disciplinary physics and related areas of science and technology, geophysics, astrophysics and astronomy. It also includes latest findings in the subject under News Scan.