An operating regime based on switching effects for photodetectors of Pb1−xSnxTe(in) MBE films

Abstract

Pb_1−xSn_xTe(In) (x = 0.20) MBE films have been prepared on BaF₂ substrates. The characteristics of resistivity relaxation under the combined effect of a pulsed electric field and IR illumination have been investigated. We have shown that the films can be used as rather fast-response photodetectors operating in a regime of periodic accumulation and quenching of the signal.