{"title":"Stimulated recombination from the defect level in doped lead telluride","authors":"S.D. Darchuk, F.F. Sizov, L.A. Korovina","doi":"10.1016/0020-0891(93)90125-Q","DOIUrl":null,"url":null,"abstract":"<div><p>The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at <em>T</em> = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level <em>E</em><sub>d</sub> ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO<sub>2</sub>-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of <em>λ</em> ∼ 25 <em>μ</em>m at <em>T</em> = 77 K.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 6","pages":"Pages 655-659"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90125-Q","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/002008919390125Q","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level Ed ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ∼ 25 μm at T = 77 K.