Stimulated recombination from the defect level in doped lead telluride

S.D. Darchuk, F.F. Sizov, L.A. Korovina
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引用次数: 2

Abstract

The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level Ed ≈ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ∼ 25 μm at T = 77 K.

掺杂碲化铅缺陷水平的受激复合
研究了Na和Tl掺杂p型PbTe单晶在T = 77 K时光激发载流子从带隙缺陷能级到价带态的弛豫过程。所观察到的光信号振荡是由价带顶部以上缺陷能级Ed≈50 meV的光激发载流子受激复合引起的。利用TEA co2激光器脉冲产生非平衡载流子反转居群。观察到的受激复合可能用于设计工作在T = 77 K λ ~ 25 μm波长范围内的红外半导体激光器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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