A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors

Abstract

Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (E_gA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.