Temperature and concentration dependence af energy gap and refrective index in certain mixed crystals and semiconductors

Abstract

Variations of energy gap (E_g) and refractive index (n) with the concentration have been studied through a set of simple empirical equations proposed in the case of certain mixed crystals of technological importance. Similarly, another set of equations has been proposed to explain the temperature dependence of the energy gap in semiconductors such as GaS, GaSe, GaTe, SnS₂ and SnSe₂. The results obtained in both cases are found to be in excellent agreement with the experimental values. The proposed equations are proved to be simple and advantageous over others in the sense that less computational work is involved in the calculations of E_g and n.