A comparison between electron mobilities in Hg1−xMnxTe and Hg1−xCdxTe

Abstract

Electron mobility in the n-type diluted magnetic semiconductor Hg_1−xMn_xTe has been calculated in the absence of a magnetic field. The results were compared to those of Hg_1−xCd_xTe for the same range of energy gap. The calculations are based on solving the Boltzmann equation using a variational principle technique. The scattering processes that are included in the calculations are the scattering of the electrons with ionized impurities, holes, alloy disorder, acoustic phonons and longitudinal optical phonons. At room temperatures the mobilities are nearly the same, while at temperatures of the order of liquid nitrogen they are about 30% less for MMT as compared with the same concentration of defects.