{"title":"Non-destructive characterization of dual epilayer silicon structures","authors":"J.A.A. Engelbrecht , M. Walden, A. Dupnock","doi":"10.1016/0020-0891(93)90018-3","DOIUrl":null,"url":null,"abstract":"<div><p>Dual epilayer structures consisting of <span><math><mtext>p−</mtext><mtext>p+</mtext></math></span> on p− silicon substrates were characterized using non-destructive Fourier transform infrared reflectance spectroscopy and sheet resistance measurements. The thickness of each layer, as well as the dopant concentration of the layers were determined. Results were compared to data obtained by spreading resistance profiling.</p></div>","PeriodicalId":81524,"journal":{"name":"Infrared physics","volume":"34 3","pages":"Pages 303-309"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-0891(93)90018-3","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0020089193900183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Dual epilayer structures consisting of on p− silicon substrates were characterized using non-destructive Fourier transform infrared reflectance spectroscopy and sheet resistance measurements. The thickness of each layer, as well as the dopant concentration of the layers were determined. Results were compared to data obtained by spreading resistance profiling.
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