Novel differentially strained p-doped quantum well infrared detector

Abstract

We propose a differentially strained p-doped quantum well infrared (IR) photodetector that achieves high performance specifications. We examine key device and material considerations for such a detector for near 10 μm detection. We calculate that through differential strain, this novel detector has improved gain and substantially reduced dark current over previous quantum well IR photodetectors, while being able to detect normal incident light.