Fast detection in the near and medium infrared by means of transverse dember effect in anisotropic PbS and PbSe films

S. Marchetti, M. Giorgi , C. Lazzari, V. Palleschi, R. Simili
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引用次数: 5

Abstract

The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1–4 μm region with a typical 0.1 VMW responsivity for detectors of 1 cm2 area.

利用各向异性PbS和PbSe薄膜的横向dember效应在近红外和中红外快速检测
半导体各向异性薄膜(PbS, PbSe)中的横向Dember效应可用于检测1 - 4 μm区域内的ns红外脉冲,对于1 cm2面积的探测器,其典型响应率为0.1 VMW。
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