HgCdTe photodiodes—A device study

Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.