Probing electron and lattice dynamics by ultrafast electron microscopy: Principles and applications

IF 3.4 Q1 ENGINEERING, MECHANICAL
Yiling Lian, Jingya Sun, Lan Jiang
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引用次数: 0

Abstract

Microscale charge and energy transfer is an ultrafast process that can determine the photoelectrochemical performance of devices. However, nonlinear and nonequilibrium properties hinder our understanding of ultrafast processes; thus, the direct imaging strategy has become an effective means to uncover ultrafast charge and energy transfer processes. Due to diffraction limits of optical imaging, the obtained optical image has insufficient spatial resolution. Therefore, electron beam imaging combined with a pulse laser showing high spatial–temporal resolution has become a popular area of research, and numerous breakthroughs have been achieved in recent years. In this review, we cover three typical ultrafast electron beam imaging techniques, namely, time-resolved photoemission electron microscopy, scanning ultrafast electron microscopy, and ultrafast transmission electron microscopy, in addition to the principles and characteristics of these three techniques. Some outstanding results related to photon–electron interactions, charge carrier transport and relaxation, electron–lattice coupling, and lattice oscillation are also reviewed. In summary, ultrafast electron beam imaging with high spatial–temporal resolution and multidimensional imaging abilities can promote the fundamental understanding of physics, chemistry, and optics, as well as guide the development of advanced semiconductors and electronics.

Abstract Image

用超快电子显微镜探测电子和晶格动力学:原理和应用
微尺度电荷和能量转移是一个可以决定器件光电化学性能的超快过程。然而,非线性和非平衡性质阻碍了我们对超快过程的理解;因此,直接成像策略已成为揭示超快电荷和能量转移过程的有效手段。由于光学成像的衍射限制,所获得的光学图像具有不足的空间分辨率。因此,显示高时空分辨率的电子束成像与脉冲激光相结合已成为一个热门研究领域,近年来取得了许多突破。在这篇综述中,我们介绍了三种典型的超快电子束成像技术,即时间分辨光电发射电子显微镜、扫描超快电子显微镜和超快透射电子显微镜,以及这三种技术的原理和特点。还综述了与光子-电子相互作用、电荷载流子输运和弛豫、电子-晶格耦合和晶格振荡有关的一些杰出结果。总之,具有高时空分辨率和多维成像能力的超快电子束成像可以促进对物理、化学和光学的基本理解,并指导先进半导体和电子学的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
3.50
自引率
0.00%
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