Electrochemical migration behavior of copper under a thin distilled water layer

Kang Qi, Hualiang Huang
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Abstract

Electrochemical migration behavior of copper under a thin distilled water layer (TDWL) was explored by electrochemical and surface characterization. It demonstrates that electrochemical migration of copper can occur under a TDWL. The short-circuit time caused by copper dendrites increases with TDWL thickness. It is attributed to the acceleration of hydroxyl ion migration caused by the increasing TDWL thickness, which inhibits migration of copper ions due to the formation of Cu(OH)2. The short-circuit time decreases with applied bias voltage, which originates from the acceleration of copper dissolution.

铜在蒸馏水薄层下的电化学迁移行为
通过电化学和表面表征研究了铜在薄蒸馏水层(TDWL)下的电化学迁移行为。这表明,在TDWL下,铜可以发生电化学迁移。铜枝晶引起的短路时间随着TDWL厚度的增加而增加。这归因于TDWL厚度的增加导致羟基离子迁移的加速,这抑制了铜离子由于Cu(OH)2的形成而迁移。短路时间随着施加的偏置电压而减少,这源于铜溶解的加速。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
7.30
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0.00%
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