The effects of CuO doping on structural, electrical and optical properties of CdO thin films deposited by pulsed laser deposition technique

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2022-09-09 DOI:10.15251/jor.2022.184.579

S. M. A. Al-dujayli, N. Ali

引用次数: 2

Abstract

Thin films of (CdO)x (CuO)1-x (where x = 0.0, 0.2, 0.3, 0.4 and 0.5) were prepared by the pulsed laser deposition. The CuO addition caused an increase in diffraction peaks intensity at (111) and a decrease in diffraction peaks intensity at (200). As CuO content increases, the band gap increases to a maximum of 3.51 eV, maximum resistivity of 8.251x 104 Ω.cm with mobility of 199.5 cm2 / V.s, when x= 0.5. The results show that the conductivity is ntype when x value was changed in the range (0 to 0.4) but further addition of CuO converted the samples to p-type.

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CuO掺杂对脉冲激光沉积CdO薄膜结构、电学和光学性能的影响

通过脉冲激光沉积制备了（CdO）x（CuO）1-x（其中x=0.0、0.2、0.3、0.4和0.5）薄膜。CuO的添加导致在（111）处的衍射峰强度增加，并且在（200）处衍射峰强度降低。当x=0.5时，随着CuO含量的增加，带隙增加到最大3.51eV，最大电阻率为8.251x104Ω.cm，迁移率为199.5cm2/V.s。结果表明，当x值在（0至0.4）范围内变化时，电导率为ntype，但进一步添加CuO使样品转变为p型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.