Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

IF 1 Q3 MULTIDISCIPLINARY SCIENCES

gazi university journal of science Pub Date : 2023-03-03 DOI:10.35378/gujs.1218206

Neslihan Delen, I. Tasçioglu, S. ALTINDAL YERİŞKİN, A. Özbay

{"title":"Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics","authors":"Neslihan Delen, I. Tasçioglu, S. ALTINDAL YERİŞKİN, A. Özbay","doi":"10.35378/gujs.1218206","DOIUrl":null,"url":null,"abstract":"In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/İnterface-layer/Semiconductor (MIS) type Schotty Diodes (SDs) have been investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was enlarged on the pSi wafer by utilizing sol-gel technique. Ideality-factor(n), potential barrier Фbo, Rs, shunt resistances (Rsh) and rectification rate (RR) (Iforward/Ireverse) values have been calculated based on thermionic emission (TE) theory and Cheung function between -5V and 5V and they changed for 0.1, 0.2, and 0.3 Cd doped interfacial layer. Energy-dependent profiles of them were also extracted from the forward bias IV data and their magnitude was found as 1012eV-1.cm-2 order which are very appropriate for the MIS type SD. The values of n, barrier height (BH), Фbo, and RR were changed from the 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106, These results show that electronic parameters of these SDs are strong function of voltage, calculated method, and the dopand rate of Cadminium (Cd) interfacial layer and the best one rate is the 30% Cd:ZnO. Thus such an interfacial layer may be used instead of traditional insulator layers and increase the quality of Metal/Semiconductor (MS) type SDs. \n.","PeriodicalId":12615,"journal":{"name":"gazi university journal of science","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2023-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"gazi university journal of science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35378/gujs.1218206","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}

引用次数: 1

Abstract

In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/İnterface-layer/Semiconductor (MIS) type Schotty Diodes (SDs) have been investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was enlarged on the pSi wafer by utilizing sol-gel technique. Ideality-factor(n), potential barrier Фbo, Rs, shunt resistances (Rsh) and rectification rate (RR) (Iforward/Ireverse) values have been calculated based on thermionic emission (TE) theory and Cheung function between -5V and 5V and they changed for 0.1, 0.2, and 0.3 Cd doped interfacial layer. Energy-dependent profiles of them were also extracted from the forward bias IV data and their magnitude was found as 1012eV-1.cm-2 order which are very appropriate for the MIS type SD. The values of n, barrier height (BH), Фbo, and RR were changed from the 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106, These results show that electronic parameters of these SDs are strong function of voltage, calculated method, and the dopand rate of Cadminium (Cd) interfacial layer and the best one rate is the 30% Cd:ZnO. Thus such an interfacial layer may be used instead of traditional insulator layers and increase the quality of Metal/Semiconductor (MS) type SDs. .

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利用电压-电流（IV）特性的Al-（Cd:ZnO）-pSi肖特基二极管（SD）表面态和串联电阻（Rs）的电压相关分布

本工作利用300K下的IV特性研究了所制备的Al-（CdxZn1-xO）-pSi金属/界面层/半导体（MIS）型肖特基二极管（SD）的主要电子参数。根据热离子发射（TE）理论和Cheung函数，计算了理想因子（n）、势垒Фbo、Rs、分流电阻（Rsh）和整流率（RR）（Iforward/Ireverse）在-5V和5V之间的值，并对0.1、0.2和0.3Cd掺杂的界面层进行了改变。从正向偏压IV数据中提取了它们的能量依赖性轮廓，发现它们的大小为1012eV-1.cm-2级，这非常适合MIS类型SD。n、势垒高度（BH）、Фbo和RR的值从4.347、0.582eV、5.74x103变为5.293、0.607eV、2.83x106，这些结果表明，这些SDs的电子参数与电压、计算方法和镉界面层的掺杂率有很强的函数关系，其中最佳掺杂率为30%Cd:ZnO。因此，可以使用这种界面层来代替传统的绝缘体层，并提高金属/半导体（MS）型SD的质量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

gazi university journal of science MULTIDISCIPLINARY SCIENCES-

CiteScore

1.60

自引率

11.10%

发文量

期刊介绍： The scope of the “Gazi University Journal of Science” comprises such as original research on all aspects of basic science, engineering and technology. Original research results, scientific reviews and short communication notes in various fields of science and technology are considered for publication. The publication language of the journal is English. Manuscripts previously published in another journal are not accepted. Manuscripts with a suitable balance of practice and theory are preferred. A review article is expected to give in-depth information and satisfying evaluation of a specific scientific or technologic subject, supported with an extensive list of sources. Short communication notes prepared by researchers who would like to share the first outcomes of their on-going, original research work are welcome.