Problems and Properties of a Current Amplifier When Realized in Ultra Deep Sub-micron Technology

Abstract

The paper considers the problems related to short-channel effects in a current amplifier, when realized in ultra-deep sub-micron technology. A short description of the circuit and a limitation concerning its basic parameters is given at the beginning. Several steps, allowing an approximate design of the circuit, are outlined. They are applied for design of three versions of the amplifier, each of them is realized with FETs having different channel length: 90 nm, 45 nm and 30 nm. Their basic properties are simulated and discussed, demonstrating the major benefit of the shortening of the channel length—extension of the frequency bandwidth. The problems arising with the shorter channels length are also considered briefly.