Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications

Q4 Engineering
Maruf Hossain, Md. Maruf Hossain Shuvo, Twisha Titirsha, S. K. Islam
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引用次数: 0

Abstract

This paper presents technology computer-aided design (TCAD) modeling of an enhancement-mode aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT) with extensive π-gate optimization for high-power and radio frequency (RF) applications. Effects of the gate voltages on threshold (Vth), transconductance (gm), breakdown voltage (VBR), cutoff frequency (fT), maximum frequency of oscillation (fmax) and minimum noise figure (NFmin) are systematically investigated with different gate structures (π–Shaped p-GaN MISHEMT, π–Shaped p-GaN HEMT, π–Gate HEMT). A comparative study demonstrates that π–Gate with additional p-GaN and insulating layer makes the device effectively operate in the enhancement mode having a threshold voltage (Vth) = 1.72 V with a breakdown voltage (VBR) = 341 V, exhibiting better gate control with maximum transconductance (gm,max) of 0.321 S/mm. In addition, the proposed device architecture with an optimized gate structure maintains a balance between a positive device threshold and a high breakdown voltage and achieves a better noise immunity with the minimum noise figure of 0.64 dB while operating at 10 GHz with a cutoff frequency (fT) of 33.4 GHz, and a maximum stable operating frequency (fmax) of 82.3 GHz. Moreover, the device achieved an outstanding Vth, gm,max, VBR, fT, fmax and NFmin making it suitable for high-power, high-speed electronics, and low-noise amplifiers.
用于高功率应用的增强型HEMT的π-门优化建模
本文介绍了一种增强型氮化铝镓(AlGaN)/氮化镓(GaN)高电子迁移率晶体管(HEMT)的计算机辅助设计(TCAD)技术建模,该晶体管具有广泛的π门优化,适用于高功率和射频(RF)应用。系统地研究了不同栅极结构(π–Shaped p-GaN MISHEMT、π–Shape p-GaN HEMT和π–gate HEMT)下栅极电压对阈值(Vth)、跨导(gm)、击穿电压(VBR)、截止频率(fT)、最大振荡频率(fmax)和最小噪声系数(NFmin)的影响。一项比较研究表明,具有额外p-GaN和绝缘层的π–Gate使器件有效地工作在阈值电压(Vth)=1.72 V、击穿电压(VBR)=341 V的增强模式下,表现出更好的栅极控制,最大跨导(gm,max)为0.321 S/mm。此外,所提出的具有优化栅极结构的器件架构保持了正器件阈值和高击穿电压之间的平衡,并在截止频率(fT)为33.4GHz、最大稳定工作频率(fmax)为82.3GHz的10GHz下工作时,以0.64dB的最小噪声系数实现了更好的抗噪声性。此外,该器件实现了出色的Vth、gm、max、VBR、fT、fmax和NFmin,适用于高功率、高速电子器件和低噪声放大器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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