Impact of sneak paths on in-memory logic design in memristive crossbars

IF 1 Q4 COMPUTER SCIENCE, INFORMATION SYSTEMS
K. Datta, Arighna Deb, Abhoy Kole, R. Drechsler
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引用次数: 0

Abstract

Abstract Resistive Random Access Memory (RRAM), also termed as memristors, is a non-volatile memory where information is stored in memory cells in the form of resistance. Due to its non-volatile resistive switching properties, memristors, in the form of crossbars, are used for storing information, neuromorpic computing, and logic synthesis. In spite of the wide range of applications, memristive crossbars suffer from a so-called sneak path problem which results in an erroneous reading of memristor’s state. Till date, no or very few logic synthesis approaches for in-memory computing have considered the sneak path problem during the realizations of Boolean functions. In other words, the effects of sneak paths on the Boolean function realizations in crossbars still remain an open problem. In this paper, we have addressed this issue. In particular, we study the impacts of function realizations in two memristive crossbar structures: Zero-Transistor-One-Resistor (0T1R) and One-Transistor-One-Resistor (1T1R) in the presence of sneak paths. Experimental analysis on IWLS and ISCAS-85 benchmarks shows that even in the presence of sneak paths, the 1T1R crossbar structures with multiple rows and columns are the most efficient as compared to the 1T1R structures with single row and multiple columns in terms of crossbar size and number of execution cycles.
偷偷路径对记忆交叉杆内存逻辑设计的影响
摘要电阻随机存取存储器(RRAM),也称为忆阻器,是一种非易失性存储器,其中信息以电阻的形式存储在存储单元中。由于其非易失性电阻开关特性,交叉开关形式的忆阻器用于存储信息、神经组织计算和逻辑合成。尽管应用范围很广,但忆阻交叉器仍存在所谓的潜行路径问题,这会导致对忆阻器状态的错误读取。到目前为止,在实现布尔函数的过程中,没有或很少有用于内存计算的逻辑综合方法考虑到潜行路径问题。换句话说,隐藏路径对交叉开关中布尔函数实现的影响仍然是一个悬而未决的问题。在这份文件中,我们讨论了这个问题。特别是,我们研究了在存在潜通路的情况下,两种忆阻交叉结构中的功能实现的影响:零晶体管一电阻器(0T1R)和一极管一电阻器(1T1R)。对IWLS和ISCAS-85基准测试的实验分析表明,即使在存在潜在路径的情况下,与具有单行多列的1T1R结构相比,就交叉开关大小和执行周期数而言,具有多行多列的1R交叉开关结构也是最有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IT-Information Technology
IT-Information Technology COMPUTER SCIENCE, INFORMATION SYSTEMS-
CiteScore
3.80
自引率
0.00%
发文量
29
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