Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

Abstract

In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WOx) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 103 with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WOx selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.