{"title":"Femto power-delay(FPD)super threshold level shifter for network on chip (NoC)","authors":"Srinivasulu Gundala, M. Mahaboob Basha, R. Busi","doi":"10.1080/21681724.2022.2068660","DOIUrl":null,"url":null,"abstract":"ABSTRACT This paper presents a novel architecture of femto power-delay super threshold voltage level shifter (LS) for network on-chip voltage control, developed using feedback topology for error aware interconnections data transmission. The proposed LS utilises eight MOS transistors with low aspect ratios for level up or level down. The developed LS can shift as low as 0.12–1.25 V with a tremendous reduction in delay and power consumption. Implemented in 65 nm CMOS technology, the post-layout simulation substantiates the achievement of voltage translation. The proposed LS incurs energy per cycle of 44 fJ during up shift; the average of level up and level down static power consumption is 3.61 nW, while VDDL is 0.3 V and VDDH is 1.2 V at a frequency of 1 MHz. The layout area of the proposed LS is 3.21 µm × 2.13 µm.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"11 1","pages":"241 - 253"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/21681724.2022.2068660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 1
Abstract
ABSTRACT This paper presents a novel architecture of femto power-delay super threshold voltage level shifter (LS) for network on-chip voltage control, developed using feedback topology for error aware interconnections data transmission. The proposed LS utilises eight MOS transistors with low aspect ratios for level up or level down. The developed LS can shift as low as 0.12–1.25 V with a tremendous reduction in delay and power consumption. Implemented in 65 nm CMOS technology, the post-layout simulation substantiates the achievement of voltage translation. The proposed LS incurs energy per cycle of 44 fJ during up shift; the average of level up and level down static power consumption is 3.61 nW, while VDDL is 0.3 V and VDDH is 1.2 V at a frequency of 1 MHz. The layout area of the proposed LS is 3.21 µm × 2.13 µm.
期刊介绍:
International Journal of Electronics Letters (IJEL) is a world-leading journal dedicated to the rapid dissemination of new concepts and developments across the broad and interdisciplinary field of electronics. The Journal welcomes submissions on all topics in electronics, with specific emphasis on the following areas: • power electronics • embedded systems • semiconductor devices • analogue circuits • digital electronics • microwave and millimetre-wave techniques • wireless and optical communications • sensors • instrumentation • medical electronics Papers should focus on technical applications and developing research at the cutting edge of the discipline. Proposals for special issues are encouraged, and should be discussed with the Editor-in-Chief.