Investigation of Structural and Thermoelectric Properties of Bismuth Selenide Thin Films

IF 0.9 4区数学 Q3 COMPUTER SCIENCE, THEORY & METHODS

Combinatorics, Probability & Computing Pub Date : 2021-02-24 DOI:10.2174/1877946810999200831101239

H. Sharma, Y. Sharma

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引用次数: 0

Abstract

Thermoelectric material with high performance and low cost is the basic need of today. Bismuth selenide is a thermoelectric material. A set of bismuth selenide thin films having different stoichiometry ratios varying Bi/Se ratio from 0.123 to 0.309 have been prepared. The present work deals with the synthesis and characterization of various thin films of bismuth selenide. The thermoelectric properties of thin films were also investigated. The aim of this work is to investigate the effect of composition ratio on the structural and thermoelectric properties and to find out the best stoichiometry ratio of bismuth selenide thin films that can be used in the application of thermoelectric devices. A set of bismuth selenide thin films having different elemental compositions were prepared by employing the thermal evaporation technique. The crystal structure and elemental composition of thin films were investigated by XRD and EDAX, respectively. The roughness of films was analyzed by AFM. The thermoelectric properties of various thin films were also measured. XRD spectrum confirms the formation of phases formed in thin films which slightly matched with standard data. AFM results indicated that the surface of films was smooth and nanoparticles were generated on the surface. AFM results indicated that the surfaces of annealed thin films were smoother than as-deposited thin films. Seebeck coefficient was found negative throughout the temperature range. The power factor was also calculated by the Seebeck coefficient and results revealed the effect of composition ratio on Seebeck coefficient, electrical conductivity, and power factor. Thin films having a composition ratio of 0.182 exhibited the highest power factor. This study provides relevant basic information on the thermoelectric property of thin films, as well as presents the effect of compositional variation on thermoelectric measurements. From the application point of view in the thermoelectric devices, the best stoichiometric thin films out of four prepared thin films have been presented.

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硒化铋薄膜的结构与热电性能研究

高性能、低成本的热电材料是当今的基本需求。硒化铋是一种热电材料。制备了Bi/Se比值为0.123 ~ 0.309的不同化学计量比的铋薄膜。本文研究了各种硒化铋薄膜的合成和表征。研究了薄膜的热电性能。本文的目的是研究硒化铋薄膜的组成比对其结构和热电性能的影响，并找出可用于热电器件的硒化铋薄膜的最佳化学计量比。采用热蒸发技术制备了一套元素组成不同的硒化铋薄膜。采用XRD和EDAX分析了薄膜的晶体结构和元素组成。采用原子力显微镜对膜的粗糙度进行了分析。测量了不同薄膜的热电性能。XRD谱图证实薄膜中形成的相与标准数据略有匹配。AFM结果表明，薄膜表面光滑，表面产生了纳米颗粒。AFM结果表明，退火薄膜的表面比沉积薄膜光滑。塞贝克系数在整个温度范围内均为负。用塞贝克系数计算了功率因数，结果揭示了塞贝克系数、电导率和功率因数对组成比的影响。薄膜的组成比为0.182时，其功率因数最高。本研究提供了薄膜热电性能的相关基本信息，并提出了成分变化对热电测量的影响。从热电器件的应用角度出发，给出了四种制备薄膜中化学计量性能最好的一种。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Combinatorics, Probability & Computing 数学-计算机：理论方法

CiteScore

2.40

自引率

11.10%

发文量

审稿时长

6-12 weeks

期刊介绍： Published bimonthly, Combinatorics, Probability & Computing is devoted to the three areas of combinatorics, probability theory and theoretical computer science. Topics covered include classical and algebraic graph theory, extremal set theory, matroid theory, probabilistic methods and random combinatorial structures; combinatorial probability and limit theorems for random combinatorial structures; the theory of algorithms (including complexity theory), randomised algorithms, probabilistic analysis of algorithms, computational learning theory and optimisation.