发布求助
文献互助 智能选刊 最新文献

Study of AlGaN/GaN MOS-HEMTs with TiO2 Gate Dielectric and Regrown Source/Drain

IF 0.8 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal of New Technology and Materials Pub Date : 2018-12-01 DOI:10.12816/0053495
Touati , Z., Hamaiziaa , Z., Messaib , Z.
{"title":"Study of AlGaN/GaN MOS-HEMTs with TiO2 Gate Dielectric and Regrown Source/Drain","authors":"Touati , Z., Hamaiziaa , Z., Messaib , Z.","doi":"10.12816/0053495","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":16506,"journal":{"name":"Journal of New Technology and Materials","volume":" ","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of New Technology and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.12816/0053495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
分享
查看原文 本刊更多论文
具有TiO2栅极介质和再生源/漏极的AlGaN/GaN MOS-HEMTs的研究
本文章由计算机程序翻译，如有差异，请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of New Technology and Materials
Journal of New Technology and Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
自引率
0.00%
发文量
0
审稿时长
8 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信