Taehun Kim, Hui-Dong Lee, Bonghyuk Park, Seunghyun Jang, Sunwoo Kong, Changkun Park
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引用次数: 8
Abstract
This study presents a high-linearity K - band single-pole double-throw (SPDT) switch with asymmetric topology in a 65-nm CMOS process for 5G applications. To simultaneously obtain high power-handling capability and high isolation in the Tx and Rx modes, respectively, we propose an SPDT switch using asymmetric topology and the stacked-transistor technique. In both the Tx/Rx modes, the proposed SPDT switch operates with an insertion loss of less than 2.1 dB and isolation better than 22.5 dB in the frequency range 20–25 GHz. At 22 GHz, the measurement results of the input 1-dB compression point (IP1 dB) are 32.5 and 4.7 dBm in Tx and Rx modes, respectively. The chip core size of the proposed SPDT switch is 0.03 mm2.
期刊介绍:
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.