On the nonlinear dynamics of a piezoresistive based mass switch based on catastrophic bifurcation

IF 2.7 3区 材料科学 Q2 ENGINEERING, MECHANICAL
Saber Azizi, Hadi Madinei, Hamed Haddad Khodaparast, Shirko Faroughi, Michael I. Friswell
{"title":"On the nonlinear dynamics of a piezoresistive based mass switch based on catastrophic bifurcation","authors":"Saber Azizi,&nbsp;Hadi Madinei,&nbsp;Hamed Haddad Khodaparast,&nbsp;Shirko Faroughi,&nbsp;Michael I. Friswell","doi":"10.1007/s10999-023-09650-z","DOIUrl":null,"url":null,"abstract":"<div><p>This research investigates the feasibility of mass sensing in piezoresistive MEMS devices based on catastrophic bifurcation and sensitivity enhancement due to the orientation adjustment of the device with respect to the crystallographic orientation of the silicon wafer. The model studied is a cantilever microbeam at the end of which an electrostatically actuated tip mass is attached. The piezoresistive layers are bonded to the vicinity of the clamped end of the cantilever and the device is set to operate in the resonance regime by means of harmonic electrostatic excitation. The nonlinearities due to curvature, shortening and electrostatic excitation have been considered in the modelling process. It is shown that once the mass is deposited on the tip mass, the system undergoes a cyclic fold bifurcation in the frequency domain, which yields a sudden jump in the output voltage of the piezoresistive layers; this bifurcation is attributed to the nonlinearities governing the dynamics of the response. The partial differential equations of the motion are derived and discretized to give a finite degree of freedom model based on the Galerkin method, and the limit cycles are captured in the frequency domain by using the shooting method. The effect of the orientation of the device with respect to the crystallographic coordinates of the silicon and the effect of the orientation of the piezoresistive layers with respect to the microbeam length on the sensitivity of the device is also investigated. Thanks to the nonlinearity and the orientation adjustment of the device and piezoresistive layers, a twofold sensitivity enhancement due to the added mass was achieved. This achievement is due to the combined amplification of the sensitivity in the vicinity of the bifurcation point, which is attributed to the nonlinearity and maximizing the sensitivity by orientation adjustment of the anisotropic piezoresistive coefficients.</p></div>","PeriodicalId":593,"journal":{"name":"International Journal of Mechanics and Materials in Design","volume":"19 3","pages":"521 - 535"},"PeriodicalIF":2.7000,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10999-023-09650-z.pdf","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Mechanics and Materials in Design","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10999-023-09650-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}
引用次数: 1

Abstract

This research investigates the feasibility of mass sensing in piezoresistive MEMS devices based on catastrophic bifurcation and sensitivity enhancement due to the orientation adjustment of the device with respect to the crystallographic orientation of the silicon wafer. The model studied is a cantilever microbeam at the end of which an electrostatically actuated tip mass is attached. The piezoresistive layers are bonded to the vicinity of the clamped end of the cantilever and the device is set to operate in the resonance regime by means of harmonic electrostatic excitation. The nonlinearities due to curvature, shortening and electrostatic excitation have been considered in the modelling process. It is shown that once the mass is deposited on the tip mass, the system undergoes a cyclic fold bifurcation in the frequency domain, which yields a sudden jump in the output voltage of the piezoresistive layers; this bifurcation is attributed to the nonlinearities governing the dynamics of the response. The partial differential equations of the motion are derived and discretized to give a finite degree of freedom model based on the Galerkin method, and the limit cycles are captured in the frequency domain by using the shooting method. The effect of the orientation of the device with respect to the crystallographic coordinates of the silicon and the effect of the orientation of the piezoresistive layers with respect to the microbeam length on the sensitivity of the device is also investigated. Thanks to the nonlinearity and the orientation adjustment of the device and piezoresistive layers, a twofold sensitivity enhancement due to the added mass was achieved. This achievement is due to the combined amplification of the sensitivity in the vicinity of the bifurcation point, which is attributed to the nonlinearity and maximizing the sensitivity by orientation adjustment of the anisotropic piezoresistive coefficients.

Abstract Image

基于突变分岔的压阻式质量开关非线性动力学研究
本研究探讨了基于灾难性分岔的压阻式MEMS器件质量传感的可行性,以及由于器件相对于硅片晶体取向的取向调整而提高的灵敏度。所研究的模型是一个悬臂微梁,其末端附着一个静电驱动的尖端质量。压阻层粘接在悬臂的夹紧端附近,并且通过谐波静电激励将装置设置为在谐振状态下工作。在建模过程中考虑了曲率、缩短和静电激励等非线性因素。结果表明,当质量块沉积在尖端质量块上时,系统在频域发生循环褶皱分岔,导致压阻层输出电压突然跳变;这种分岔归因于控制响应动力学的非线性。基于伽辽金方法,导出了运动的偏微分方程,并对其进行离散,得到了一个有限自由度的运动模型,并利用射击法在频域捕获了极限环。研究了器件的取向与硅晶体坐标的关系以及压阻层的取向与微束长度的关系对器件灵敏度的影响。由于器件和压阻层的非线性和方向调整,由于增加的质量,灵敏度提高了两倍。这一成就是由于在分岔点附近的灵敏度的综合放大,这是由于非线性和通过各向异性压阻系数的取向调整来最大化灵敏度。
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来源期刊
International Journal of Mechanics and Materials in Design
International Journal of Mechanics and Materials in Design ENGINEERING, MECHANICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
6.00
自引率
5.40%
发文量
41
审稿时长
>12 weeks
期刊介绍: It is the objective of this journal to provide an effective medium for the dissemination of recent advances and original works in mechanics and materials'' engineering and their impact on the design process in an integrated, highly focused and coherent format. The goal is to enable mechanical, aeronautical, civil, automotive, biomedical, chemical and nuclear engineers, researchers and scientists to keep abreast of recent developments and exchange ideas on a number of topics relating to the use of mechanics and materials in design. Analytical synopsis of contents: The following non-exhaustive list is considered to be within the scope of the International Journal of Mechanics and Materials in Design: Intelligent Design: Nano-engineering and Nano-science in Design; Smart Materials and Adaptive Structures in Design; Mechanism(s) Design; Design against Failure; Design for Manufacturing; Design of Ultralight Structures; Design for a Clean Environment; Impact and Crashworthiness; Microelectronic Packaging Systems. Advanced Materials in Design: Newly Engineered Materials; Smart Materials and Adaptive Structures; Micromechanical Modelling of Composites; Damage Characterisation of Advanced/Traditional Materials; Alternative Use of Traditional Materials in Design; Functionally Graded Materials; Failure Analysis: Fatigue and Fracture; Multiscale Modelling Concepts and Methodology; Interfaces, interfacial properties and characterisation. Design Analysis and Optimisation: Shape and Topology Optimisation; Structural Optimisation; Optimisation Algorithms in Design; Nonlinear Mechanics in Design; Novel Numerical Tools in Design; Geometric Modelling and CAD Tools in Design; FEM, BEM and Hybrid Methods; Integrated Computer Aided Design; Computational Failure Analysis; Coupled Thermo-Electro-Mechanical Designs.
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