Fully Integrated K-Band Active Bandpass Filter In GPDK 90nm CMOS Technology

Abstract

Abstract The bandpass filter is one of the essential blocks of every modern RF transceiver. Performance of the transceiver greatly depends on the performance of the bandpass filter. A bandpass filter designed with passive inductors suffers from some drawbacks like large chip size, low-quality factor, less tenability etc. To prevail over these constraints, an active inductor-based bandpass filter circuit has been designed in GPDK-90nm CMOS technology utilizing cadence virtuoso environment. The simulation result shows that the active inductor-based bandpass filter circuit design achieves a gain of 6.79dB, a bandwidth of 5.05 GHz and a noise figure of 3.10dB. The circuit dissipates only 3.55mW power for its operation from a single 1.5V DC supply. By avoiding bulky inductor in the design helped to attain a very small chip area of 127.704μm2.