Elaboration and characterization of pure ZnO, Ag:ZnO and Ag-Fe:ZnO thin films: Effect of Ag and Ag-Fe doping on ZnO physical properties

IF 1.2 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
F. Lekoui, Salim Hassani, E. Garoudja, Rachid El Amrani, W. Filali, Ouahid Sifi, S. Oussalah
{"title":"Elaboration and characterization of pure ZnO, Ag:ZnO and Ag-Fe:ZnO thin films: Effect of Ag and Ag-Fe doping on ZnO physical properties","authors":"F. Lekoui, Salim Hassani, E. Garoudja, Rachid El Amrani, W. Filali, Ouahid Sifi, S. Oussalah","doi":"10.31349/revmexfis.69.051005","DOIUrl":null,"url":null,"abstract":"Pure ZnO, Ag doped ZnO and Ag-Fe co-doped ZnOwere preparedusing thermal evaporation.  XRD analysis confirms that all layers present a hexagonal wurtzite structure; however, there is a small shift in the peaks position due to thedistortion of the film’s lattice. Scanning Electron Microscopy (SEM) analysis reveals the morphological variation of the film’s surfaces due to the doping. Pure ZnO and Ag:ZnO films have a nanostructured surface, however, Ag-Fe:ZnO films showed a smooth surface without any nanoparticles. Raman analysis showed the presence of A1(LO), E2(high) andlocal vibrational modes (LVMs) for all layers. Ultraviolet–visible spectroscopy (UV-VIS) analysis shows that the films have a good transparency and the bandgapdecreases with ZnO doping from 3.80 eVto 3.78 eV and 3.70 eV,for pure ZnO, Ag:ZnO and Ag-Fe:ZnO films, respectively. The electrical properties confirm the semiconductor nature of ZnO films with a resistivity around 1.4 Ω.cm, and with Ag and Ag-Fe doping, the films behave like conductors with 1.4´10-4Ω.cm and 1.4´10-3Ω.cm, respectively. These results make the Ag:ZnO and Ag-Fe ZnO thin films good materials for photovoltaic application.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.2000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Revista Mexicana De Fisica","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.31349/revmexfis.69.051005","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Pure ZnO, Ag doped ZnO and Ag-Fe co-doped ZnOwere preparedusing thermal evaporation.  XRD analysis confirms that all layers present a hexagonal wurtzite structure; however, there is a small shift in the peaks position due to thedistortion of the film’s lattice. Scanning Electron Microscopy (SEM) analysis reveals the morphological variation of the film’s surfaces due to the doping. Pure ZnO and Ag:ZnO films have a nanostructured surface, however, Ag-Fe:ZnO films showed a smooth surface without any nanoparticles. Raman analysis showed the presence of A1(LO), E2(high) andlocal vibrational modes (LVMs) for all layers. Ultraviolet–visible spectroscopy (UV-VIS) analysis shows that the films have a good transparency and the bandgapdecreases with ZnO doping from 3.80 eVto 3.78 eV and 3.70 eV,for pure ZnO, Ag:ZnO and Ag-Fe:ZnO films, respectively. The electrical properties confirm the semiconductor nature of ZnO films with a resistivity around 1.4 Ω.cm, and with Ag and Ag-Fe doping, the films behave like conductors with 1.4´10-4Ω.cm and 1.4´10-3Ω.cm, respectively. These results make the Ag:ZnO and Ag-Fe ZnO thin films good materials for photovoltaic application.
纯ZnO、Ag:ZnO和Ag-Fe:ZnO薄膜的制备与表征:Ag和Ag-Fe掺杂对ZnO物理性能的影响
采用热蒸发法制备了纯ZnO、Ag掺杂ZnO和Ag- fe共掺杂ZnO。XRD分析证实各层均呈六角形纤锌矿结构;然而,由于薄膜晶格的扭曲,峰的位置有一个小的位移。扫描电子显微镜(SEM)分析表明,由于掺杂,薄膜表面的形态发生了变化。纯ZnO和Ag:ZnO薄膜表面具有纳米结构,而Ag- fe:ZnO薄膜表面光滑,没有纳米颗粒。拉曼分析表明,各层均存在A1(低)、E2(高)和局部振动模式(LVMs)。紫外可见光谱(UV-VIS)分析表明,ZnO掺杂后薄膜具有良好的透明性,带隙减小,纯ZnO、Ag:ZnO和Ag- fe:ZnO薄膜的带隙分别从3.80 eV减小到3.78 eV和3.70 eV。电学性质证实了ZnO薄膜的半导体性质,其电阻率约为1.4 Ω。Ag和Ag- fe掺杂后,薄膜表现为1.4´10-4Ω的导体。Cm和1.4 ' 10-3Ω。厘米,分别。这些结果使Ag:ZnO和Ag- fe ZnO薄膜成为光伏应用的良好材料。
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来源期刊
Revista Mexicana De Fisica
Revista Mexicana De Fisica 物理-物理:综合
CiteScore
2.20
自引率
11.80%
发文量
87
审稿时长
4-8 weeks
期刊介绍: Durante los últimos años, los responsables de la Revista Mexicana de Física, la Revista Mexicana de Física E y la Revista Mexicana de Física S, hemos realizado esfuerzos para fortalecer la presencia de estas publicaciones en nuestra página Web ( http://rmf.smf.mx).
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