{"title":"Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers","authors":"Yuxiao Wang, Ruifu Zhou, Haofei Cong, Guangshou Chen, Yanyan Ma, Shuwen Xin, Dalong Ge, Yuanbin Qin, Seeram Ramakrishna, Xuhai Liu, Fengyun Wang","doi":"10.1007/s42765-023-00318-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides (IGZO) is demonstrated. The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity, leading to a wider regulatory range of synaptic plasticity. The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A·W<sup>−1</sup> and excellent photosensitivity, which can detect light signals as weak as 0.03 mW·cm<sup>−2</sup>. In particular, the paired-pulse facilitation index reaches up to 252% with over 2 h of enhanced memory retention exhibiting the long-term potentiation. Furthermore, the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced. These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":459,"journal":{"name":"Advanced Fiber Materials","volume":"5 6","pages":"1919 - 1933"},"PeriodicalIF":17.2000,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Fiber Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s42765-023-00318-z","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides (IGZO) is demonstrated. The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity, leading to a wider regulatory range of synaptic plasticity. The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A·W−1 and excellent photosensitivity, which can detect light signals as weak as 0.03 mW·cm−2. In particular, the paired-pulse facilitation index reaches up to 252% with over 2 h of enhanced memory retention exhibiting the long-term potentiation. Furthermore, the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced. These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
期刊介绍:
Advanced Fiber Materials is a hybrid, peer-reviewed, international and interdisciplinary research journal which aims to publish the most important papers in fibers and fiber-related devices as well as their applications.Indexed by SCIE, EI, Scopus et al.
Publishing on fiber or fiber-related materials, technology, engineering and application.