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Theoretical Investigation of δ-doped Double Barriers GaAs/AlGaAs RTDs at varying device geometry and temperature dependence

IF 0.8 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal of New Technology and Materials Pub Date : 2017-12-30 DOI:10.12816/0044602
M. Singh, M. J. Siddiqui, P. A. Alvi
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δ掺杂双势垒GaAs/AlGaAs RTD的理论研究
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Journal of New Technology and Materials
Journal of New Technology and Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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