Evaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction Measurements

Q4 Physics and Astronomy

Defect and Diffusion Forum Pub Date : 2023-06-06 DOI:10.4028/p-jf4ooe

M. Zielinski, Mark E. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier, V. Scuderi, F. La Via

引用次数: 0

Abstract

X-Ray diffraction measurements of lattice parameter were performed for (111) and (100) oriented 3C-SiC/Si epiwafers. Strain of 3C-SiC epilayer and Si substrate were estimated and the result was compared with routine wafer deformation measurements. An unexpected discrepancy was observed between XRD and curvature measurements for (100) oriented samples.

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3C-SiC/Si外延片应变的X射线衍射评价

对（111）和（100）取向的3C SiC/Si外延片进行了晶格参数的X射线衍射测量。对3C-SiC外延层和Si衬底的应变进行了估算，并与常规的晶片变形测量结果进行了比较。在（100）取向样品的XRD和曲率测量之间观察到出乎意料的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Defect and Diffusion Forum Physics and Astronomy-Radiation

CiteScore

1.20

自引率

0.00%

发文量

127

期刊介绍： Defect and Diffusion Forum (formerly Part A of ''''Diffusion and Defect Data'''') is designed for publication of up-to-date scientific research and applied aspects in the area of formation and dissemination of defects in solid materials, including the phenomena of diffusion. In addition to the traditional topic of mass diffusion, the journal is open to papers from the area of heat transfer in solids, liquids and gases, materials and substances. All papers are peer-reviewed and edited. Members of Editorial Boards and Associate Editors are invited to submit papers for publication in “Defect and Diffusion Forum” . Authors retain the right to publish an extended and significantly updated version in another periodical.