Behavioral Modeling of the Pinched Hysteresis Loop of a Pt/TiO2/Pt Memristor

Q4 Engineering
Aalvee Asad Kausani, M. Anwar
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引用次数: 0

Abstract

The fourth fundamental circuit element, the memristor, has become a promising candidate to substantially improve the energy and area efficiencies of circuits as traditional complementary metal-oxide-semiconductor (CMOS) technology is approaching its physical limit. However, a mathematical representation of the experimentally obtained current-voltage characteristic of the memristor is necessary to develop and test memristor-based circuitry in electrical design simulators. Here we have developed a behavioral model for the I-V trace of a Pt/TiO2/Pt memristor that can relate the fitting equations with the physical processes associated with the device in response to applied electrical excitation. Multiple conduction mechanisms are involved in memristor that depend upon its latest state. Therefore, the I-V has distinct segments that altogether form a hysteresis loop pinched at the center. In accordance with the predominant conduction mechanisms at each segment, our model defines the form of the equations. The behavioral model can adequately represent the experimental I-V retrieved from existing work.
Pt/TiO2/Pt忆阻器夹滞环的行为建模
随着传统的互补金属氧化物半导体(CMOS)技术接近其物理极限,第四种基本电路元件忆阻器已成为一个有希望大幅提高电路能量和面积效率的候选元件。然而,为了在电气设计模拟器中开发和测试基于忆阻器的电路,需要用数学形式表示实验得到的忆阻器的电流-电压特性。在这里,我们开发了一个Pt/TiO2/Pt忆阻器的I-V迹的行为模型,该模型可以将拟合方程与响应于外加电激励的器件相关的物理过程联系起来。忆阻器具有多种传导机制,其传导机制取决于其最新状态。因此,I-V具有不同的节段,它们共同形成一个在中心被挤压的磁滞回线。根据每段的主要传导机制,我们的模型定义了方程的形式。行为模型可以充分地表示从现有工作中检索到的实验I-V。
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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