P‐121: Evidence for the formation of localized charge traps during OLED degradation

Abstract

In this study we investigate the details of the degradation processes occurring in a specific TADF OLED stack. The devices are stressed with constant current. In order to gain understanding in the underlying degradation mechanisms, a series of experimental techniques are performed during stressing interruption. To complement the measurements, electrical device simulations are used to model the OLEDs and identify the degradation causes. Specifically, it is found that the generation of trap states at an interface causes a variation of the charge injection and accumulation inside the device.