High-Efficiency Spark Plasma Sintered Ge0.3Si0.7:P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping

IF 2.7 3区工程技术 Q2 ENGINEERING, MECHANICAL

Nanoscale and Microscale Thermophysical Engineering Pub Date : 2023-04-03 DOI:10.1080/15567265.2023.2198581

M. Dorokhin, Y. Kuznetsov, P. Demina, I. Erofeeva, A. Zavrazhnov, M. Boldin, E. A. Lantsev, A. Popov, A. Boryakov, A. Zdoroveyshchev, M. Ved, D. Zdoroveyshchev, M.G. Korotkova

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引用次数: 1

Abstract

ABSTRACT A spark plasma sintering technology has already become rather common for the fabrication of GexSi1-x nanostructured thermoelectric solid solutions. Such trend is related with a number of opportunities and technological tools that enable precise properties manipulation. The present paper is devoted to discussing the modulation of GexSi1-x spark plasma sintering technique that consists in the use of silicon phosphide as a source of n-type doping within the process of sintering. The composition of the sintered powder is investigated. The synthesis of a solid solution was carried out in the process of sintering. The SiP is a chemically stable non-toxic compound that can replace toxic phosphorus in thermoelectric technology thus reducing the safety requirements of the corresponding technology process. The paper investigates the effect of SiP concentration on thermoelectric characteristics. The impurity distribution is analyzed, and the association of phosphorus atoms into clusters at a very high doping level is shown. The distribution of impurity elements was controlled by EMF analysis in a scanning electron microscope. It was shown that sintering of Ge-Si-SiP powder mixture allowed obtaining the phosphorus doped GexSi1-x material with high electron concentration that demonstrate high level of thermoelectric properties. The obtained thermoelectric characteristics are compared with the world's best nanostructured materials

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以磷化硅为磷掺杂源的高效火花等离子体烧结Ge0.3Si0.7:P热电能转换器

火花等离子烧结技术已经成为制备GexSi1-x纳米结构热电固溶体的常用技术。这种趋势与许多机会和技术工具有关，这些工具可以实现精确的属性操作。本文讨论了GexSi1-x火花等离子烧结技术的调制，即在烧结过程中使用磷化硅作为n型掺杂源。对烧结粉末的组成进行了研究。在烧结过程中进行了固溶体的合成。SiP是一种化学稳定的无毒化合物，可以替代热电技术中有毒的磷，从而降低了相应工艺过程的安全要求。研究了SiP浓度对热电特性的影响。分析了杂质的分布，表明磷原子在高掺杂水平下形成团簇。用扫描电镜电动势分析控制杂质元素的分布。结果表明，通过烧结Ge-Si-SiP混合粉末，可以获得具有高电子浓度、高热电性能的磷掺杂GexSi1-x材料。所获得的热电特性与世界上最好的纳米结构材料进行了比较

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来源期刊

Nanoscale and Microscale Thermophysical Engineering 工程技术-材料科学：表征与测试

CiteScore

5.90

自引率

2.40%

发文量

审稿时长

3.3 months

期刊介绍： Nanoscale and Microscale Thermophysical Engineering is a journal covering the basic science and engineering of nanoscale and microscale energy and mass transport, conversion, and storage processes. In addition, the journal addresses the uses of these principles for device and system applications in the fields of energy, environment, information, medicine, and transportation. The journal publishes both original research articles and reviews of historical accounts, latest progresses, and future directions in this rapidly advancing field. Papers deal with such topics as: transport and interactions of electrons, phonons, photons, and spins in solids, interfacial energy transport and phase change processes, microscale and nanoscale fluid and mass transport and chemical reaction, molecular-level energy transport, storage, conversion, reaction, and phase transition, near field thermal radiation and plasmonic effects, ultrafast and high spatial resolution measurements, multi length and time scale modeling and computations, processing of nanostructured materials, including composites, micro and nanoscale manufacturing, energy conversion and storage devices and systems, thermal management devices and systems, microfluidic and nanofluidic devices and systems, molecular analysis devices and systems.