Preparation and Investigation of Vacuum-Deposited CH3NH3PbI3 – xClx Perovskite Films on Black Silicon

Abstract

The technology of vacuum co-deposition and sequential deposition of the mixed-halide perovskite films (CH₃NH₃PbI_3–xCl_x) has been optimized. The possibility of improving the thermal stability of films by adding cesium atoms to an inorganic precursor is demonstrated. The structural and optical properties of perovskite films on black silicon are synthesized and investigated. It is shown that films of high quality in structure and phase composition are formed, which are characterized by a low reflection coefficient in a wide range of radiation wavelengths. Vacuum-deposited perovskite films on black silicon have great potential for the development of high-efficiency tandem solar cells.