Density functional descriptions of interfacial electronic structure

IF 6.1 Q2 CHEMISTRY, PHYSICAL
Zhen-Fei Liu
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Abstract

Heterogeneous interfaces are central to many energy-related applications in the nanoscale. From the first-principles electronic structure perspective, one of the outstanding problems is accurately and efficiently calculating how the frontier quasiparticle levels of one component are aligned in energy with those of another at the interface, i.e., the so-called interfacial band alignment or level alignment. The alignment or the energy offset of these frontier levels is phenomenologically associated with the charge-transfer barrier across the interface and therefore dictates the interfacial dynamics. Although many-body perturbation theory provides a formally rigorous framework for computing the interfacial quasiparticle electronic structure, it is often associated with a high computational cost and is limited by its perturbative nature. It is, therefore, of great interest to develop practical alternatives, preferably based on density functional theory (DFT), which is known for its balance between efficiency and accuracy. However, conventional developments of density functionals largely focus on total energies and thermodynamic properties, and the design of functionals aiming for interfacial electronic structure is only emerging recently. This Review is dedicated to a self-contained narrative of the interfacial electronic structure problem and the efforts of the DFT community in tackling it. Since interfaces are closely related to surfaces, we first discuss the key physics behind the surface and interface electronic structure, namely, the image potential and the gap renormalization. This is followed by a review of early examinations of the surface exchange-correlation hole and the exchange-correlation potential, which are central quantities in DFT. Finally, we survey two modern endeavors in functional development that focus on the interfacial electronic structure, namely, the dielectric-dependent hybrids and local hybrids.
界面电子结构的密度函数描述
在纳米尺度上,异质界面是许多与能源相关的应用的核心。从第一性原理电子结构的角度来看,其中一个突出的问题是准确有效地计算一个组件的边界准粒子能级如何在界面上与另一个组件的准粒子能级在能量上对齐,即所谓的界面带对准或能级对准。这些前沿能级的排列或能量偏移在现象上与界面上的电荷转移势垒有关,因此决定了界面动力学。尽管多体微扰理论为计算界面准粒子电子结构提供了一个正式的严格框架,但它通常与高计算成本相关,并且受到其微扰性质的限制。因此,开发实用的替代方案是非常有趣的,最好是基于密度泛函理论(DFT),该理论以其在效率和准确性之间的平衡而闻名。然而,密度泛函的传统发展主要集中在总能量和热力学性质上,而针对界面电子结构的泛函设计是最近才出现的。本综述致力于对界面电子结构问题和DFT社区在解决这一问题方面的努力进行独立的叙述。由于界面与表面密切相关,我们首先讨论了表面和界面电子结构背后的关键物理,即像势和间隙重整化。接下来是对表面交换相关空穴和交换相关势的早期研究的回顾,它们是DFT中的中心量。最后,我们回顾了两种关注界面电子结构的功能发展的现代努力,即介电相关杂化和局部杂化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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